A simple, robust and controllable nano-structures fabrication technique using standard silicon wafers

We succeeded to realize nano-structures using standard {100} silicon wafers and anisotropic etching; this technique makes use of the low etching rate in TMAH of {111} planes or silicon, in comparison to {100} planes, to adjust the nanometric dimensions of the structures. No sub-micron lithography is required in this technique: it is compatible with normal UV photolithography. Neither complicated process steps are required: a succession of oxidation, oxide patterning and anisotropic etching only are needed. Nano-holes and nano-wires were made using this technique and possible applications of the structures are described for two BIO-MEMS projects.