DocumentCode
1697253
Title
Fine-Grain Leakage Power Reduction Method for m-out-of-n Encoded Circuits Using Multi-threshold-Voltage Transistors
Author
Imai, Masashi ; Takada, Kouei ; Nanya, Takashi
Author_Institution
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo
fYear
2009
Firstpage
209
Lastpage
216
Abstract
Asynchronous self-timed circuits which tolerate any delay variations are a feasible solution to timing-related problems while they suffer large energy dissipation due to large amount of their circuits. In future process technologies, it has been recognized that leakage power is a large factor in the total power dissipation. In this paper, we propose two leakage power reduction methods for m-out-of-n encoded circuits which operate based on the four-phase handshake protocol using multi-threshold-voltage transistors. One method is based on the traditional power gating technique which reduces leakage power by shutting off the power of idle circuits. Another method is to apply high-threshold-voltage transistors into the off-state transistors whose gate input signals are inactive in the idle phase. The evaluation results show that about 94% and 81% of the leakage power in the idle phase can be reduced.
Keywords
asynchronous circuits; low-power electronics; threshold logic; asynchronous self-timed circuit; fine-grain leakage power reduction method; four-phase handshake protocol; m-out-of-n encoded circuits; multithreshold-voltage transistor; Asynchronous circuits; Combinational circuits; Crosstalk; Delay; Energy dissipation; Laboratories; Power dissipation; Protocols; Transistors; Voltage; Asynchronous; MTCMOS; leakage power;
fLanguage
English
Publisher
ieee
Conference_Titel
Asynchronous Circuits and Systems, 2009. ASYNC '09. 15th IEEE Symposium on
Conference_Location
Chapel Hill, NC
ISSN
1522-8681
Print_ISBN
978-1-4244-3933-1
Type
conf
DOI
10.1109/ASYNC.2009.11
Filename
5010350
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