Using deep RIE for micromachining SOI wafers

The paper summarizes our experience with deep RIE etching of silicon for MEMS applications, including optical MEMS and sensors, with emphasis on deep RIE of SOI wafers. Most of the reported results have been achieved using the STS ICP RIE etcher with a mechanical chuck. The major issues discussed are: special tooling for deep RIE for MEMS applications, wafer/structures overheating, masking materials, etch depth non-uniformity across the wafer, and etch profile.