• DocumentCode
    1697641
  • Title

    Thermoelastic damping in trench-refilled polysilicon resonators

  • Author

    Abdolvand, R. ; Ho, G.K. ; Erbil, A. ; Ayazi, F.

  • Author_Institution
    Sch. of Electr. & Comput.Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    1
  • fYear
    2003
  • Firstpage
    324
  • Abstract
    This paper presents quality factor measurement results for trench-refilled (TR) polysilicon beam resonators which demonstrate an increase in Q as their resonant frequency increases, a trend opposite to what is expected from solid beams of the same dimensions. This phenomenon is believed to be due to a multi-path thermoelastic damping characteristic. The frequency-dependant behavior of Q/sub TED/ in trench-refilled resonators with voids is analyzed, for which the measurement data is agreeable. A multiphysics FEMLAB simulation was also performed to illustrate the thermal gradients in a resonating TR beam. We show that in a particular frequency range, trench-refilled polysilicon beams can have a higher Q than their silicon counterpart and the thickness of the resonator can be tuned to produce a desired quality factor behavior.
  • Keywords
    Q-factor; damping; finite element analysis; micromechanical resonators; silicon; thermoelasticity; voids (solid); FEMLAB simulation; frequency-dependant behavior; quality factor measurement; resonant frequency; silicon counterpart; thermal gradient; thermoelastic damping; trench-refilled polysilicon beam resonators; voids; Damping; Electrodes; Frequency measurement; Micromechanical devices; Q factor; Resonance; Resonant frequency; Silicon; Solids; Thermoelasticity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-7731-1
  • Type

    conf

  • DOI
    10.1109/SENSOR.2003.1215318
  • Filename
    1215318