Title :
Crystallographic influence on nanomechanics of ultra-thin silicon resonators
Author :
Wang, D.F. ; Ono, T. ; Esashi, M.
Author_Institution :
Graduate Sch. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
The influence of crystallographic orientations on nanomechanical properties of 50-nm-thick single crystalline silicon resonators was investigated by examining the effects of surface treatments, such as flash-heating and O/sub 2/ adsorption on the mechanical quality factors (/spl Qscr/;-factors) and resonant frequencies. Cantilevers with [100], [110] and [111] orientations were examined in this work. A 1500-nm-thick [100] cantilever array was also studied for comparison. The loss mechanisms in energy dissipation were discussed in terms of support loss, thermoelastic loss, as well as surface loss. The results obtained in this study provide an insight into the understanding of surface effects on nanomechanics of resonating elements, and provide design guidelines for future´s nanoengineered devices for ultimate sensing.
Keywords :
Q-factor; adsorption; crystal resonators; elemental semiconductors; oxygen; silicon; surface treatment; 50 nm; O/sub 2/; Si; crystallographic orientations; energy dissipation; flash-heating; mechanical quality factors; nanomechanical properties; nanomechanics; single crystalline silicon resonators; surface effects; surface loss; surface treatment; thermoelastic loss; ultrathin silicon resonators; Crystallization; Crystallography; Energy dissipation; Mechanical factors; Nanoscale devices; Q factor; Resonant frequency; Silicon; Surface treatment; Thermoelasticity;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215321
