Low-loss RF MEMS metal-to-metal contact switch with CSP structure

Author

Seki, T. ; Sato, Seiki ; Masuda, T. ; Kimura, I. ; Imanaka, K.

Author_Institution

Central R&D Lab., Omron Corp., Kyoto, Japan

Volume

1

fYear

2003

Firstpage

340

Abstract

We reported a novel RF-MEMS switch with an extremely low insertion loss of-0.5 dB and a high isolation of-30 dB up to 10 GHz. The switch was fabricated ultra compact size of 1.8/spl times/1.8/spl times/1.0 mm/sup 3/ with Chip Scale Packaging (CSP) structure utilizing wafer level packaging technology. The wafer level packaging with frit glass makes it possible to mount the device directly on the circuit board without any extra outer package and bonding of wires, which deteriorate the RF characteristics. The package is made from cavitied glass wafer as cap-material and frit glass as seal-material. The device wafer consists of single crystal silicon actuators, a base glass substrate and a cap glass.

Keywords

chip scale packaging; microswitches; 1.0 mm; 1.8 mm; 10 GHz; CSP structure; chip scale packaging; low insertion loss; low-loss RF MEMS metal-metal contact switch; microelectromechanical system; wafer level packaging technology; Chip scale packaging; Contacts; Glass; Insertion loss; Isolation technology; Printed circuits; Radiofrequency microelectromechanical systems; Switches; Wafer bonding; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7731-1

Type

conf

DOI

10.1109/SENSOR.2003.1215322

Filename

1215322