DocumentCode
1697818
Title
A poly-Si defect-tolerant scanner for large area AMLCDs
Author
Asada, H. ; Hayama, H. ; Saito, T. ; Sera, K. ; Okumura, F.
Author_Institution
GTC Corp., Tokyo, Japan
fYear
1993
Firstpage
198
Lastpage
199
Abstract
A poly-Si TFT (thin-film transistor) defect-tolerant scanner for large-area AMLCD (active-matrix liquid-crystal displays) is described. The scanner consists of regular and spare delay circuits, error correcting circuits, transfer switches, exchange switches, and output buffers. An 8-stage prototype scanning circuit on a quartz substrate uses a low-temperature (>
Keywords
laser beam machining; liquid crystal displays; thin film transistors; 0 to 600 degC; TFT; XeCl excimer laser; active-matrix liquid-crystal displays; defect-tolerant operation; delay circuits; driving method; error correcting circuits; exchange switches; large area AMLCDs; laser cutting; output buffers; poly-Si defect-tolerant scanner; quartz substrate; short/open defects; transfer switches; Active matrix liquid crystal displays; CMOS process; Delay; Error correction; Laser beam cutting; Prototypes; Substrates; Switches; Switching circuits; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1993. Digest of Technical Papers. 40th ISSCC., 1993 IEEE International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-0987-1
Type
conf
DOI
10.1109/ISSCC.1993.280049
Filename
280049
Link To Document