DocumentCode
1698203
Title
A comparative study of MOS VCOs for low voltage high performance operation
Author
Zhan, J.H.C. ; Duster, J.S. ; Kornegay, K.T.
Author_Institution
Cornell Univ., Ithaca, NY, USA
fYear
2004
Firstpage
244
Lastpage
247
Abstract
Six 10GHz MOS VCOs were designed and fabricated in the IBM 6RF 0.25um CMOS process. Their oscillation frequency, output amplitude and phase noise performance are measured and compared, and the results confirm that replacing shielded-ground inductors with high-resistivity substrate inductors improves phase noise performance. Capacitive source degeneration has also been identified as a performance limiting mechanism in MOS based VCOs rather than performance enhancing as in BJT based VCOs.
Keywords
CMOS analogue integrated circuits; MMIC oscillators; inductors; integrated circuit noise; low-power electronics; network topology; phase noise; voltage-controlled oscillators; 10 GHz; CMOS VCO; capacitive source degeneration; cross-coupled pair; high-resistivity substrate inductors; low voltage high performance operation; oscillation frequency; output amplitude; phase noise; CMOS process; Circuit topology; Frequency measurement; Inductors; Low voltage; MOS devices; Noise measurement; Phase measurement; Phase noise; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design, 2004. ISLPED '04. Proceedings of the 2004 International Symposium on
Print_ISBN
1-58113-929-2
Type
conf
DOI
10.1109/LPE.2004.1349344
Filename
1349344
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