Title :
A 3.3-V monolithic photodetector/CMOS-preamplifier for 531 Mb/s optical data link applications
Author :
Lim, P.J.-W. ; Tzeng, A.Y.C. ; Chuang, H.L. ; St.Onge, S.A.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A monolithically-integrated, low-bias, shortwave silicon photodetector and high-speed CMOS preamplifier in a standard VLSI BiCMOS technology with no process modifications is described. The integrated photodetector/preamplifier operates up to 531 Mb/s using a 850-nm wavelength laser source at a measured sensitivity of -14.8 dBm, while dissipating only 66 mW from a single +3.3-V supply. A measured output eye-diagram using an 850-nm wavelength laser source modulated with a 531-Mb/s, 2/sup 7/-1 pseudorandom-bit-sequence input is shown. The bit-error-rate at 531 Mb/s and at 266 Mb/s is plotted as a function of average optical input power.<>
Keywords :
BiCMOS integrated circuits; VLSI; integrated optoelectronics; optical communication equipment; photodetectors; preamplifiers; 3.3 V; 531 Mbit/s; 66 mW; 850 nm; VLSI BiCMOS technology; average optical input power; bit-error-rate; laser source; measured output eye-diagram; monolithic photodetector; optical data link applications; preamplifier for 531 Mb/s; pseudorandom-bit-sequence input; BiCMOS integrated circuits; CMOS process; CMOS technology; High speed optical techniques; Optical modulation; Photodetectors; Preamplifiers; Silicon; Very large scale integration; Wavelength measurement;
Conference_Titel :
Solid-State Circuits Conference, 1993. Digest of Technical Papers. 40th ISSCC., 1993 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-0987-1
DOI :
10.1109/ISSCC.1993.280069
