A precision SOI-CMOS front-end amplifier for smart microsensors applicable to severe operation environment with large temperature variation

Author

Takao, H. ; Ina, F. ; Douzaka T ; Sawada, K. ; Ishida, M.

Author_Institution

Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan

Volume

1

fYear

2003

Firstpage

448

Abstract

In this paper, a precision SOI-CMOS analog front-end amplifier for smart microsecond interface applicable to severe environment is presented. Although SOI-CMOS circuits can operate over 150/spl deg/C, temperature drift of offset voltage is a serious problem to be solved for precise signal detection. Thus, a novel autozero circuit configuration is applied to stabilize offset voltage of the amplifier precisely at high temperatures where leakage current of switches is not negligible. Offset drift of fabricated SOI-CMOS amplifier was well suppressed below 1mV from RT to 200/spl deg/C without any trimming. This amplifier has essentially high robustness and stability for dramatic temperature change under severe environment.

Keywords

CMOS analogue integrated circuits; amplifiers; leakage currents; microsensors; semiconductor device models; silicon-on-insulator; SOI-CMOS analog front-end amplifier; Si; complementary metal-oxide-semiconductor; leakage current; offset voltage; robustness; silicon-on-insulator; smart microsecond interface; smart microsensors; temperature drift; Circuit stability; Leakage current; Microsensors; Operational amplifiers; Robust stability; Signal detection; Switches; Switching circuits; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7731-1

Type

conf

DOI

10.1109/SENSOR.2003.1215350

Filename

1215350