Title :
A precision SOI-CMOS front-end amplifier for smart microsensors applicable to severe operation environment with large temperature variation
Author :
Takao, H. ; Ina, F. ; Douzaka T ; Sawada, K. ; Ishida, M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Toyohashi Univ. of Technol., Japan
Abstract :
In this paper, a precision SOI-CMOS analog front-end amplifier for smart microsecond interface applicable to severe environment is presented. Although SOI-CMOS circuits can operate over 150/spl deg/C, temperature drift of offset voltage is a serious problem to be solved for precise signal detection. Thus, a novel autozero circuit configuration is applied to stabilize offset voltage of the amplifier precisely at high temperatures where leakage current of switches is not negligible. Offset drift of fabricated SOI-CMOS amplifier was well suppressed below 1mV from RT to 200/spl deg/C without any trimming. This amplifier has essentially high robustness and stability for dramatic temperature change under severe environment.
Keywords :
CMOS analogue integrated circuits; amplifiers; leakage currents; microsensors; semiconductor device models; silicon-on-insulator; SOI-CMOS analog front-end amplifier; Si; complementary metal-oxide-semiconductor; leakage current; offset voltage; robustness; silicon-on-insulator; smart microsecond interface; smart microsensors; temperature drift; Circuit stability; Leakage current; Microsensors; Operational amplifiers; Robust stability; Signal detection; Switches; Switching circuits; Temperature; Voltage;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215350
