DocumentCode :
1699003
Title :
Whole field vapor pressure modeling of QFN during reflow with coupled hygro-mechanical and thermo-mechanical stresses
Author :
Tee, Tong Yan ; Ng, Hun Shen
Author_Institution :
STMicroelectronics, Singapore, Singapore
fYear :
2002
fDate :
6/24/1905 12:00:00 AM
Firstpage :
1552
Lastpage :
1559
Abstract :
A comprehensive and integrated package stress model is established for QFN (Quad Flat Non-lead) packages with consideration of the effects of moisture diffusion, heat transfer, thermo-mechanical stress, hygro-mechanical stress, and vapor pressure induced during reflow. The critical plastic materials, i.e. mold compound and die attach, are characterized for hygroswelling and moisture properties. The moisture absorption during preconditioning at JEDEC Level 1, and moisture desorption at various high temperatures are characterized. The vapor pressure modeling applies the micro-mechanics approach, the Representative Volume Element (RVE), with consideration of the micro-void effect. The vapor pressure can be calculated based on the local moisture concentration after preconditioning. Results show that the vapor pressure saturates much faster than the moisture diffusion, and a near uniform vapor pressure is reached in the package. The vapor pressure introduces additional strain of the same order as the thermal strain and hygro strain to the package. Vapor pressure-induced expansion is directly related to the vapor pressure distribution, rather than the moisture distribution.
Keywords :
heat transfer; integrated circuit packaging; micromechanics; moisture; plastics; stress analysis; thermal stresses; vapour pressure; QFN package; critical plastic materials; die attach; heat transfer; hygro-mechanical stress; integrated stress model; local moisture concentration; micro-mechanics approach; micro-void effect; moisture absorption; moisture desorption; moisture diffusion; mold compound; quad flat nonlead package; reflow; representative volume element; thermo-mechanical stress; vapor pressure distribution; vapor pressure modeling; vapor pressure-induced expansion; Absorption; Capacitive sensors; Heat transfer; Microassembly; Moisture; Packaging; Plastics; Semiconductor device modeling; Thermal stresses; Thermomechanical processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2002. Proceedings. 52nd
ISSN :
0569-5503
Print_ISBN :
0-7803-7430-4
Type :
conf
DOI :
10.1109/ECTC.2002.1008314
Filename :
1008314
Link To Document :
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