DocumentCode :
1699017
Title :
Multi-path Switching Device Utilizing a Multi-terminal Nanowire Junction for MDD-Based Logic Circuit
Author :
Kasai, Seiya ; Shiratori, Yuta ; Miura, Kensuke ; Wu, Nan-Jian
Author_Institution :
Grad. Sch. of Sci. & Technol., Hokkaido Univ., Sapporo
fYear :
2009
Firstpage :
331
Lastpage :
336
Abstract :
Simple and compact multi-path switching devices for multi-valued decision diagram (MDD)-based logic circuits are designed, fabricated and characterized. The devices switch multiple exit branches for electrons entering from an entry branch, according to multi-valued input. The switching function is implemented by dual gating on multiple nanowires with different threshold voltages. The gate threshold voltage is controlled by precise design of gate structures and sizes in nanometer scale. The operation principle of the device is described using a simple analytical model. Ternary-path switching devices are demonstrated using AlGaAs/GaAs etched nanowire junctions together with nanometer-scale Schottky wrap gates (WPGs) and in-plane gates (IPGs).
Keywords :
aluminium compounds; gallium arsenide; multivalued logic circuits; nanotechnology; nanowires; AlGaAs-GaAs; inplane gate; logic circuits; multipath switching device; multiterminal nanowire junction; multivalued decision diagram; nanometer scale Schottky wrap gates; ternary path switching device; Analytical models; Electrons; Gallium arsenide; Logic circuits; Nanoscale devices; Size control; Switches; Switching circuits; Threshold voltage; Voltage control; GaAs; multi-path switching device; multi-valued decision diagram; nanowire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Multiple-Valued Logic, 2009. ISMVL '09. 39th International Symposium on
Conference_Location :
Naha, Okinawa
ISSN :
0195-623X
Print_ISBN :
978-1-4244-3841-9
Electronic_ISBN :
0195-623X
Type :
conf
DOI :
10.1109/ISMVL.2009.43
Filename :
5010421
Link To Document :
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