Title :
Property revealing for silicon chip-bonding glass
Author :
Sun, YiCai ; Pan, Guofeng ; Li, Linlin ; Lui, Pange
Author_Institution :
Hebei Univ. of Technol., Tianjin, China
fDate :
6/24/1905 12:00:00 AM
Abstract :
A low temperature glass solder of the ternary system with a stoichiometric composition of PbO:ZnO:B2O3=58:18:24(wt%) has been developed for bonding silicon chip onto a glass substrate. When bonding at 510°C, the quenched state from its molten (900°C) was used. After bonding, it turned into a crystalline state, whose thermal behaviour was obviously different from the quenched state. In order to illuminate the relationship between properties and behaviours, DSC infrared absorption spectroscopy and X-ray diffraction were carried out for two powders of the quenched and recondensed states. It can be confirmed that for the quenched one, the softening point (450°C) was lower and it was melted thoroughly at 500∼510°C for chip-bonding, and there was no X-ray diffraction peak, which is a typical spectrum for the glass phase. However, for the recondensed glass, the melting point was raised to 631∼644°C. There were the same X-ray diffraction peaks as the standard spectrum of Pb2ZnB2O6. These results indicate that the recondensed glass solder possess a crystalline structure to benefit the usage for devices at higher temperature.
Keywords :
X-ray diffraction; glass; infrared spectra; integrated circuit bonding; integrated circuit packaging; melting point; microassembling; soldering; substrates; 450 degC; 500 to 510 degC; 631 to 644 degC; 900 degC; B2O3; DSC infrared absorption spectroscopy; Pb2ZnB2O6; PbO; Si; Si chip-bonding glass; X-ray diffraction; ZnO; crystalline state; glass phase; glass substrate; low temperature glass solder; low-temperature glass; melting point; quenched state; recondensed glass; softening point; ternary system; thermal behaviour; Bonding; Crystallization; Electromagnetic wave absorption; Glass; Infrared spectra; Silicon; Spectroscopy; Temperature; Thermal quenching; X-ray diffraction;
Conference_Titel :
Electronic Components and Technology Conference, 2002. Proceedings. 52nd
Print_ISBN :
0-7803-7430-4
DOI :
10.1109/ECTC.2002.1008317