DocumentCode
1699142
Title
ESD protection circuit for 8.5Gbps I/Os in 90nm CMOS technology
Author
Sarbishaei, H. ; Sachdev, M.
Author_Institution
Dept of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
fYear
2009
Firstpage
697
Lastpage
700
Abstract
In this paper we designed an ESD protected CML driver for 8.5 Gbps data rate. ESD protection for this circuit is provided with DSCR. A detailed analysis is done on the impact of ESD protection on performance of the driver. It is shown that DSCR offers up to 2.7 kV HBM protection with very small impact on performance of the driver.
Keywords
CMOS integrated circuits; electrostatic discharge; CMOS technology; ESD protection circuit; CMOS technology; Capacitance; Diodes; Driver circuits; Electrostatic discharge; Medical simulation; Operating systems; Protection; Testing; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-4071-9
Electronic_ISBN
978-1-4244-4073-3
Type
conf
DOI
10.1109/CICC.2009.5280729
Filename
5280729
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