Will thermal noise affect nano-communications?

Author

Santagati, P. ; Beiu, Valeriu

Author_Institution

Coll. of Inf. Technol., United Arab Emirates Univ., Al Ain, United Arab Emirates

fYear

2013

Firstpage

1

Lastpage

4

Abstract

The aim of this paper is to investigate how wire lengths would affect the reliability of scaled CMOS circuits during operations, by analyzing how the Johnson-Nyquist (thermal) noise on the wires affects the probability of failure (defined as the probability of switching) of scaled CMOS transistors. To this end, we consider classical CMOS circuits, and base our analysis on statistical considerations. In particular, we propose a model (that can be extended to more complex devices) for an elementary system which consists of a wire and a 16nm CMOS transistor. The distribution of the energy stored in the wire is also studied analytically, and numerical results are given.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit noise; integrated circuit reliability; probability; thermal noise; wires; Johnson-Nyquist noise; classical CMOS circuits; elementary system; failure probability; nanocommunications; scaled CMOS circuits reliability; scaled CMOS transistors; size 16 nm; statistical considerations; thermal noise; wire lengths; CMOS integrated circuits; Integrated circuit reliability; Noise; Thermal noise; Transistors; Wires; CMOS; nano-communications; thermal noise; wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Signal Processing, and their Applications (ICCSPA), 2013 1st International Conference on

Conference_Location

Sharjah

Print_ISBN

978-1-4673-2820-3

Type

conf

DOI

10.1109/ICCSPA.2013.6487322

Filename

6487322