Title :
Paths to terahertz CMOS integrated circuits
Author :
Shim, D. ; Mao, C. ; Han, R. ; Sankaran, S. ; Seok, E. ; Cao, C. ; Knap, W. ; O, K.K.
Author_Institution :
Dept. of ECE, U. of Florida, Gainesville, FL, USA
Abstract :
A 140-GHz fundamental mode VCO in 90-nm CMOS and a 410-GHz push-push VCO in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase locked loop with a frequency doubled output at 100 GHz, a 180-GHz Schottky diode detector and a 700-GHz plasma wave detector in 130-nm CMOS have been demonstrated. Based on these, paths to terahertz CMOS circuits are suggested.
Keywords :
CMOS analogue integrated circuits; Schottky diodes; frequency multipliers; millimetre wave detectors; millimetre wave integrated circuits; phase locked loops; plasma waves; submillimetre wave detectors; submillimetre wave integrated circuits; voltage-controlled oscillators; Schottky diode detector; Schottky diode frequency doubler; frequency 100 GHz; frequency 125 GHz; frequency 140 GHz; frequency 180 GHz; frequency 410 GHz; frequency 50 GHz; frequency 700 GHz; fundamental mode VCO; phase locked loop; plasma wave detector; push-push VCO; size 130 nm; size 45 nm; size 90 nm; terahertz CMOS integrated circuits; CMOS integrated circuits; CMOS technology; Frequency; Germanium silicon alloys; Indium phosphide; MOSFETs; Schottky diodes; Semiconductor diodes; Silicon germanium; Submillimeter wave technology;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280752
