Title :
Behavior of high voltage SiC VJFETs under avalanche conditions
Author :
Friedrichs, Peter ; Reimann, Tobias
Author_Institution :
SiCED Electron. Dev. GmbH & Co. KG, Erlangen
Abstract :
The paper discusses the behavior of SiC VJFETs under avalanche conditions. Safe operation under avalanche is a precondition for the effective use of switching devices in switch mode power supplies. It is shown how a VJFET device can be designed avalanche stable. Measurements of the avalanche capability of realized devices prove the expected ruggedness of SiC components. Achieved single pulse energies exceed the values possible with silicon components of the same die size
Keywords :
avalanche breakdown; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; silicon compounds; switched mode power supplies; SiC; VJFET device; avalanche conditions; switch mode power supplies; switching devices; Clamps; DC-DC power converters; Power semiconductor switches; Robustness; Silicon carbide; Snubbers; Switched-mode power supply; Switching circuits; Switching converters; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-9547-6
DOI :
10.1109/APEC.2006.1620767
