Title :
Practical design considerations for IPEM-based PFC converter employing CoolMOS and SiC diode
Author :
Chen, Qiaoliang ; Yang, Xu ; Liu, Jinjun ; Wang, Zhaoan
Author_Institution :
Sch. of Electr. Eng., Xi´´an Jiaotong Univ., China
Abstract :
A 1 kW IPEM (integrated power electronic module) based PFC converter, consisting of full bridge rectifier diodes, current sensing resistor and boost converter, has been developed employing CoolMOS and SiC diodes in this paper. Some practical considerations about how to reduce the parasitic inductance of high di/dt loop by comparing three different geometric DBC layouts with Ansoft Maxwell-3D, and symmetrical design for the parallel MOSFETs are demonstrated. According to the specific application and specifications, the power loss of the module is calculated before prototype fabrication, and then the thermal performance is evaluated by simulation. That optimizes the performance and reduces the design period of IPEM. Finally, the electrical performance of the module is verified experimentally.
Keywords :
power MOSFET; power convertors; power factor correction; power semiconductor diodes; silicon compounds; solid-state rectifiers; 1 kW; CoolMOS; DBC layouts; PFC converter; SiC; boost converter; current sensing resistor; full bridge rectifier diodes; integrated power electronic module; parallel MOSFET; power loss; Bridge circuits; Diodes; Fabrication; Inductance; MOSFETs; Power electronics; Rectifiers; Resistors; Silicon carbide; Virtual prototyping;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2006. APEC '06. Twenty-First Annual IEEE
Print_ISBN :
0-7803-9547-6
DOI :
10.1109/APEC.2006.1620769
