Title :
Fabrication and testing of single crystalline 3C-SiC devices using a novel SiC-on-insulator substrate
Author :
Hung-I Kuo ; Zorman, C.A. ; Mehregany, M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Case Western Reserve Univ., Cleveland, OH, USA
Abstract :
Single crystal, 3C-SiC lateral resonant structures and piezoresistive strain gauges were fabricated on a novel SiC-on-Insulator (SiCOI) substrate. The SiCOI substrates were fabricated using a bonding-free, substrate growth and etch-back method that bypasses the problems associated with conventional methods to produce dielectrically-isolated 3C-SiC films. The process works equally well with SiO/sub 2/ and stoichiometric Si/sub 3/N/sub 4/ layers since bonding is not used; additionally, surface micromachining is enabled when SiO/sub 2/ is used. Lateral resonators fabricated from the 3C-SiC films exhibited Q values as high as 103,000. Using the 3C-SiC strain gauges, the /spl pi//sub 11/ piezoresistance coefficient was the largest, with a value of -17.8/spl times/10/sup -11/ Pa/sup -1/.
Keywords :
crystal resonators; micromachining; piezoelectric thin films; piezoresistance; piezoresistive devices; semiconductor thin films; silicon compounds; stoichiometry; strain gauges; wide band gap semiconductors; Si; SiC; SiC-on-insulator substrate; SiCOI; dielectrically-isolated SiC films; etch-back method; lateral resonant structures; piezoresistance coefficient; piezoresistive strain gauges; single crystalline SiC devices; stoichiometry layers; surface micromachining; Bonding; Capacitive sensors; Crystallization; Dielectric films; Dielectric substrates; Etching; Fabrication; Piezoresistance; Resonance; Testing;
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
DOI :
10.1109/SENSOR.2003.1215580
