Title :
A comparison of IGBT models for use in circuit design
Author :
Githiari, A.N. ; Gordon, B.M. ; McMahon, R.A. ; Li, Z.M. ; Mawby, P.A.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
In choosing an accurate IGBT model for power electronic circuit design, physics-based models are frequently preferred due to their high accuracy. In this paper, an experimental comparison of two such models is made, using parameters extracted from experimental measurements. The comparison focuses on a particular IGBT, the BUP202, in three situations typical of low power (600 V, 10 A) applications
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device testing; 10 A; 600 V; BUP202 IGBT; IGBT models; experimental comparison; experimental measurements; low-power applications; physics-based models; power electronic circuit design; Circuit simulation; Circuit synthesis; Design engineering; Finite difference methods; Insulated gate bipolar transistors; Physics; Power electronics; Power engineering and energy; Power system modeling; Pulse width modulation;
Conference_Titel :
Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
Conference_Location :
St. Louis, MO
Print_ISBN :
0-7803-3840-5
DOI :
10.1109/PESC.1997.618068
