DocumentCode :
1701083
Title :
A novel device for in situ experimental characterization and reliability analysis of DC-contact RF MEMS switches
Author :
Peroulis, D. ; Katehi, L.P.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
1
fYear :
2003
Firstpage :
867
Abstract :
This paper reports a new fully-microfabricated device suitable for characterizing the force-resistance relationship for contact forces in the /spl mu/N region. The device consists of two gold beams-lower and upper beam-suspended 2 and 7.5 /spl mu/m respectively above a coplanar waveguide (cpw) line. An applied electrostatic voltage on the upper beam forces the lower beam to contact the cpw line with a contact force directly proportional to the externally applied electrostatic force. The force-resistance relationship is accurately established by measuring the device isolation over a bandwidth of 40 GHz. Preliminary measurements agree well with previously published experimental results of gold-to-gold contacts.
Keywords :
contact resistance; coplanar waveguides; gold; microswitches; reliability theory; 2 micron; 40 GHz; 7.5 micron; DC-contact RF MEMS switches; applied electrostatic force; applied electrostatic voltage; bandwidth; contact force; coplanar waveguide line; device isolation; force-resistance relationship; gold beam; gold-gold contacts; microfabricated device; reliability analysis; Bandwidth; Contacts; Electrical resistance measurement; Electrostatic measurements; Gold; Pollution measurement; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7731-1
Type :
conf
DOI :
10.1109/SENSOR.2003.1215612
Filename :
1215612
Link To Document :
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