Performance of large area silicon strip sensors for GLAST

We report on the performance of silicon strip sensors for GLAST, produced by Hamamatsu Photonics, Japan. The size of the sensors is 89.5 mm×89.5 mm and they were processed on 6 inch high resistivity wafers. By now, over 1,000 of ultimately 11,500 sensors have been produced and 619 have been investigated in detail. The average leakage current is only 2 nA/cm² at 25°C. Such a low leakage current enables us to screen out a sensor having few channels with high leakage current by looking at the total sensor leakage current, instead of measuring individual strip currents. High breakdown voltage is also achieved. Most of the sensor can hold a bias voltage up to 500 V without significant increase of leakage current. The bad channel rate is about 0.01% over 240 k channels.