Author :
Borrello, L. ; Bernardini, J. ; Dell´Orso, R. ; Dutta, S. ; Fallica, P.G. ; Gennai, S. ; Giassi, A. ; Messineo, A. ; Militaru, O. ; Segneri, G. ; Starodumov, A. ; Teodorescu, L. ; Tonelli, G. ; Valvo, G. ; Verdini, P.G.
Abstract :
The paper reports the results of a joint R&D activity between INFN Pisa and STMicroelectronics aiming at the development of silicon micro-strip detectors with very high breakdown voltage. Several series of prototypes have been manufactured on 6" diameter n-type silicon wafers. The production technology was tuned for the standard high volume production lines and was optimised to reach high processing yield while maintaining very good detector performance. We present a complete characterisation of the devices in terms of leakage current, depletion voltage, quality and uniformity of coupling capacitors and poly-silicon resistors. We discuss the main design rules and the most important technological steps which led to breakdown performance systematically exceeding 1000V even for very large area detectors.
Keywords :
capacitors; resistors; silicon radiation detectors; Si; Si micro-strip detectors; breakdown; coupling capacitors; depletion voltage; high breakdown voltage; leakage current; n-type; Capacitors; Detectors; Leakage current; Manufacturing; Optimized production technology; Prototypes; Research and development; Silicon; Testing; Voltage;
