Title :
A 1 Watt 1-5 GHz Class B push-pull Si/SiGe HBT power amplifier
Author :
Wooten, Tyson S. ; Larson, Lawrence E.
Author_Institution :
Center for Wireless Commun., Univ. of California-San Diego, La Jolla, CA, USA
Abstract :
A 1-5 GHz, Class B push-pull power amplifier implemented in a through-wafer via Si/SiGe HBT process is reported. The amplifier utilized low loss, broadband baluns, coupled spiral inductor transformers, and a differential fT-doubler. Output powers of greater than 30 dBm and efficiencies greater than 30% from 1 GHz to 4 GHz have been achieved at VCC = 6 V. An output power of 25 dBm is achieved at VCC = 3.3V over this bandwidth.
Keywords :
Ge-Si alloys; baluns; differential amplifiers; heterojunction bipolar transistors; power amplifiers; transformers; wafer level packaging; Class B push-pull HBT power amplifier; Si-SiGe; broadband baluns; coupled spiral inductor transformers; differential fT-doubler; frequency 1 GHz to 4 GHz; frequency 1 GHz to 5 GHz; power 1 W; voltage 3.3 V; voltage 6 V; Broadband amplifiers; Differential amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; Power amplifiers; Power generation; Silicon germanium; Spirals; Class B Push-Pull; baluns; broadband amplifier; fT-doubler; silicon;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280805
