A 1 Watt 1-5 GHz Class B push-pull Si/SiGe HBT power amplifier

Author

Wooten, Tyson S. ; Larson, Lawrence E.

Author_Institution

Center for Wireless Commun., Univ. of California-San Diego, La Jolla, CA, USA

fYear

2009

Firstpage

387

Lastpage

390

Abstract

A 1-5 GHz, Class B push-pull power amplifier implemented in a through-wafer via Si/SiGe HBT process is reported. The amplifier utilized low loss, broadband baluns, coupled spiral inductor transformers, and a differential f_T-doubler. Output powers of greater than 30 dBm and efficiencies greater than 30% from 1 GHz to 4 GHz have been achieved at V_CC = 6 V. An output power of 25 dBm is achieved at V_CC = 3.3V over this bandwidth.

Keywords

Ge-Si alloys; baluns; differential amplifiers; heterojunction bipolar transistors; power amplifiers; transformers; wafer level packaging; Class B push-pull HBT power amplifier; Si-SiGe; broadband baluns; coupled spiral inductor transformers; differential f_T-doubler; frequency 1 GHz to 4 GHz; frequency 1 GHz to 5 GHz; power 1 W; voltage 3.3 V; voltage 6 V; Broadband amplifiers; Differential amplifiers; Germanium silicon alloys; Heterojunction bipolar transistors; Impedance matching; Inductors; Power amplifiers; Power generation; Silicon germanium; Spirals; Class B Push-Pull; baluns; broadband amplifier; fT-doubler; silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2009. CICC '09. IEEE

Conference_Location

San Jose, CA

Print_ISBN

978-1-4244-4071-9

Electronic_ISBN

978-1-4244-4073-3

Type

conf

DOI

10.1109/CICC.2009.5280805

Filename

5280805