DocumentCode
1701327
Title
AlGaInP/GaAs power HBT´s design and fabrication
Author
Zhiqun, Cheng ; Sun Xiaowei ; Xia Guanqun ; Huaimao, Sheng ; Hongqin, Li ; Rong, Qinn ; Xiangwu, Wang
Author_Institution
Inst. of Metall., Acad. Sinica, Shanghai, China
Volume
1
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
33
Abstract
High power density and high-efficiency AlGaInP/GaAs power HBT´s have been successfully designed and fabricated by using 14 double-fingers emitters in parallel and related input and output matched circuits. Device material structure and layout design are discussed and optimized in detail. Output power of 1 W (power density of 2 mw/μm 2) with power-added efficiency of 64% at 2 GHz has been achieved
Keywords
III-V semiconductors; UHF bipolar transistors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; 1 W; 2 GHz; 64 percent; AlGaInP-GaAs; device material structure; double-fingers emitters; fabrication; high power density; high-efficiency device; layout design; matched circuits; power HBT; power-added efficiency; Degradation; Fabrication; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Photonic band gap; Power dissipation; Power generation; Power system reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1999 Asia Pacific
Print_ISBN
0-7803-5761-2
Type
conf
DOI
10.1109/APMC.1999.828041
Filename
828041
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