Title :
Wide-bandgap-semiconductor wide-bandwidth wide-temperature-range power amplifiers
Author :
Hwang, James C M ; Kehias, Lois T. ; Cook, James A. ; Calcatera, M.C. ; Sheppard, Scott T.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
fDate :
6/21/1905 12:00:00 AM
Abstract :
A wide-bandwidth and wide-temperature-range power amplifier has been demonstrated by using a GaN-AlGaN-on-SiC HEMT. With a fixed bias and without any load tuning, the amplifier exhibits useful and uniform performance across the band of 6 to 12 GHz and the temperature range of 78 to 400 K. These results demonstrate the potential of wide-bandgap semiconductors for robust power amplification. The potential for high-power, narrow-bandwidth, and regulated-temperature applications are also discussed
Keywords :
HEMT circuits; III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; hybrid integrated circuits; microwave integrated circuits; microwave power amplifiers; power HEMT; silicon compounds; wide band gap semiconductors; wideband amplifiers; 6 to 12 GHz; 78 to 400 K; GaN-AlGaN; GaN/AlGaN-on-SiC HEMT; SHF; SiC; hybrid MIC; regulated-temperature applications; robust power amplification; wide-bandgap semiconductors; wide-bandwidth amplifier; wide-temperature-range power amplifier; wideband power amplifier; Bonding; Breakdown voltage; Broadband amplifiers; Capacitance; Frequency; Gallium nitride; HEMTs; Impedance matching; MODFETs; Optical reflection;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.828042
