Wide-bandgap-semiconductor wide-bandwidth wide-temperature-range power amplifiers

Author

Hwang, James C M ; Kehias, Lois T. ; Cook, James A. ; Calcatera, M.C. ; Sheppard, Scott T.

Author_Institution

Lehigh Univ., Bethlehem, PA, USA

Volume

1

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

36

Abstract

A wide-bandwidth and wide-temperature-range power amplifier has been demonstrated by using a GaN-AlGaN-on-SiC HEMT. With a fixed bias and without any load tuning, the amplifier exhibits useful and uniform performance across the band of 6 to 12 GHz and the temperature range of 78 to 400 K. These results demonstrate the potential of wide-bandgap semiconductors for robust power amplification. The potential for high-power, narrow-bandwidth, and regulated-temperature applications are also discussed

Keywords

HEMT circuits; III-V semiconductors; aluminium compounds; gallium compounds; high-temperature electronics; hybrid integrated circuits; microwave integrated circuits; microwave power amplifiers; power HEMT; silicon compounds; wide band gap semiconductors; wideband amplifiers; 6 to 12 GHz; 78 to 400 K; GaN-AlGaN; GaN/AlGaN-on-SiC HEMT; SHF; SiC; hybrid MIC; regulated-temperature applications; robust power amplification; wide-bandgap semiconductors; wide-bandwidth amplifier; wide-temperature-range power amplifier; wideband power amplifier; Bonding; Breakdown voltage; Broadband amplifiers; Capacitance; Frequency; Gallium nitride; HEMTs; Impedance matching; MODFETs; Optical reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999 Asia Pacific

Print_ISBN

0-7803-5761-2

Type

conf

DOI

10.1109/APMC.1999.828042

Filename

828042