Scaleable small-signal MESFET/PHEMT models up to 30 mm periphery

Author

Wei, C.J. ; McCarter, S. ; Tkachenko, Y.A. ; Bartle, Dylan

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

Volume

1

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

52

Abstract

This paper addresses the issue of scaleability in equivalent-circuit based small-signal models for MESFETs and PHEMTs with periphery up to 30 mm. It is shown that large-periphery devices have complex distribution effects and the conventional scaling rule can be approximately applied only to certain elements in the equivalent circuit, namely Cgs, Cgd, Gm, and Gds. Modified scaling rules are proposed for devices with lager peripheries. The simulated S-parameters based on the new scaling rules give excellent fitting to the measured data

Keywords

S-parameters; Schottky gate field effect transistors; UHF field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; 30 mm; complex distribution effects; equivalent-circuit based models; large-periphery devices; modified scaling rules; pseudomorphic HEMT; scaleability; scaleable small-signal models; simulated S-parameters; small-signal MESFET models; small-signal PHEMT models; Analytical models; Circuits; High power amplifiers; Intrusion detection; MESFETs; Microwave devices; PHEMTs; Personal communication networks; Scattering parameters; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1999 Asia Pacific

Print_ISBN

0-7803-5761-2

Type

conf

DOI

10.1109/APMC.1999.828046

Filename

828046