DocumentCode :
1701459
Title :
What are these border traps: introduced by radiation and seen by charge pumping technique?
Author :
Djezzar, Boualem
Author_Institution :
Microelectron. Lab., CDTA, Algiers, Algeria
Volume :
1
fYear :
2001
Firstpage :
234
Abstract :
Currently, there is a great interest in radiation-induced near-interfacial oxide traps (border traps), because it offers a key in degraded modern device technology. Especially, in thinner oxides, where all oxide traps may act as border traps. In addition, gate size can significantly affect the density of border traps in a given device. Moreover, a radiation-induced border-trap study is often required for space application and long-time reliability. In this study, combined voltage- and frequency-charge pumping (CP) techniques were used to investigate the generation and the evolution of border traps as function of total dose in degraded NMOS transistors by using 1.25 MeV 60Co γ-rays. In addition, gate length effects on border-trap charge density were discussed. The results show a great correlation between radiation-induced border- and oxide-trap behaviors at low dose rate. This similarity strengthens the idea that both border- and oxide-trap could have the same defect (E´).
Keywords :
MOSFET; gamma-ray effects; nuclear electronics; γ-rays; 1.25 MeV; NMOS transistors; border traps; border-trap charge density; frequency-charge pumping; gate length; gate size; low dose rate; radiation-induced border-trap; radiation-induced near-interfacial oxide traps; voltage-pumping; CMOS technology; Charge pumps; Current measurement; Frequency; Laboratories; MOS devices; MOSFETs; Microelectronics; Microscopy; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2001 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-7324-3
Type :
conf
DOI :
10.1109/NSSMIC.2001.1008449
Filename :
1008449
Link To Document :
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