Title :
Effect of LT-layer thickness on the performance of LT-GaAs and LT-Al0.3Ga0.7As MISFETs
Author :
Rao, Rapeta V V V J ; Chong, T.C. ; Tan, L.S. ; Lau, W.S.
Author_Institution :
Centre for Wireless Commun., Nat. Univ. of Singapore, Singapore
fDate :
6/21/1905 12:00:00 AM
Abstract :
GaAs MISFETs with low temperature (LT) grown gate insulator layers have been fabricated and their electrical properties analyzed. The transconductance frequency dispersion characteristics of thinner (250 Å and 500 Å thick) LT-GaAs and LT-Al0.3Ga0.7 As MISFETs are better than those of thicker (2000 Å and 1000 Å thick) LT-GaAs MISFETs. LT-Al0.3Ga0.7As and thinner LT-GaAs samples exhibited 1/f noise, while thicker LT-GaAs samples exhibited 1/f3/2 noise with 500 Hz corner frequency. The noise parameter αlatt was found to be of the order 1.0-4 for thinner LT-GaAs samples and for all of the LT-Al 0.3Ga0.7As samples. From the DC characteristics, it was found that thinner LT-layer insulators are ideal for achieving higher transconductance without sacrificing the RF power handling capability. Our simulation results on 500 Å thick LT-Al0.3 Ga0.7As MISFET devices showed power handling capability of 1.8 W/mm for a gate bias of -2 V and drain bias of 18.5 V at 1.1 GHz
Keywords :
1/f noise; III-V semiconductors; MISFET; UHF field effect transistors; aluminium compounds; gallium arsenide; insulating thin films; semiconductor device noise; -2 V; 1.1 GHz; 1/f noise; 1/f3/2 noise; 18.5 V; 250 to 1000 A; Al0.3Ga0.7As; Al0.3Ga0.7As MISFET; DC characteristics; GaAs; GaAs MISFET; LT-layer thickness; RF power handling capability; electrical properties; low temperature grown gate insulator layers; transconductance frequency dispersion characteristics; Gallium arsenide; Insulation; Low-frequency noise; MESFETs; MISFETs; Radio frequency; Surface resistance; Temperature; Transconductance; Wireless communication;
Conference_Titel :
Microwave Conference, 1999 Asia Pacific
Print_ISBN :
0-7803-5761-2
DOI :
10.1109/APMC.1999.828048
