Title :
Impact of Transistor Level degradation on product reliability
Author_Institution :
GLOBALFOUNDRIES, Sunnyvale, CA, USA
Abstract :
Product level lifetime margins, determined by HCI and BTI, are shrinking with scaling. Accurate device-level HCI degradation models, together with known BTI models, are needed to predict frequency degradation of a ring oscillator. Both NBTI and HCI exhibit relief during AC operation and the respective contribution to RO frequency degradation is a function of applied bias.
Keywords :
hot carriers; oscillators; semiconductor device reliability; BTI; HCI; RO frequency degradation; bias temperature instability; hot carrier injection; product level lifetime margins; product reliability; ring oscillator; transistor level degradation; Degradation; Frequency; Human computer interaction; Niobium compounds; Predictive models; Ring oscillators; Titanium compounds; Transistors; HCI; NBTI; product degradation; ring oscillators;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280815
