A 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier

Author

Lee, Chihun ; Wu, Chia-Hsin ; Liu, Shen-Iuan

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2004

Firstpage

300

Lastpage

303

Abstract

To the authors´ knowledge, the first 1.2V, 18mW, 10Gb/s SiGe transimpedance amplifier (TIA) is presented here. It has been realized in a 0.35 μm SiGe process and its area is 0.45mm² with pads. Employing inductive series and shunt peaking techniques, the proposed TIA can achieve a transimpedance gain of 61.6dBΩ and the bandwidth of 7.4GHz, while dissipating only 18mW with 1.2V supply. With an equivalent photodiode capacitance of 0.15pF, this TIA shows the input referred noise current density of 22pA/√Hz.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; frequency response; low-power electronics; operational amplifiers; 1.2 V; 10 Gbit/s; 18 mW; 7.4 GHz; SiGe; bandwidth enhancement factors; common emitter amplifier; equivalent photodiode capacitance; eye-diagrams; frequency response; high-speed front-end; inductive series; input referred noise current density; low-voltage amplifier; on-wafer probing; shunt peaking; small-signal model; transimpedance amplifier; Bandwidth; Bipolar transistors; Circuits; Current density; Germanium silicon alloys; Impedance matching; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-8637-X

Type

conf

DOI

10.1109/APASIC.2004.1349478

Filename

1349478