Title :
Methods Of Three Dimensional Transient Simulation And Their Applications To VLSI Reliability Problems
Author :
Toyabe, Toru ; Ohkura, Yasuyuki ; Masuda, Hiroo
Author_Institution :
Hitachi Ltd.
Abstract :
Three-dimensional transient simulations of semiconductor devices are described. Current-drive boundary conditions are treated to simulate memory cell operations including a capacitor and a switch. Memory cell READ operation with alpha-particle impingement and microavalanche characteristics can be numerically simulated.
Keywords :
Circuit simulation; Computational modeling; Computer simulation; Integrated circuit technology; Laboratories; Numerical simulation; Poisson equations; Semiconductor devices; Switches; Very large scale integration;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721126
