• DocumentCode
    1701936
  • Title

    Methods Of Three Dimensional Transient Simulation And Their Applications To VLSI Reliability Problems

  • Author

    Toyabe, Toru ; Ohkura, Yasuyuki ; Masuda, Hiroo

  • Author_Institution
    Hitachi Ltd.
  • fYear
    1987
  • Firstpage
    74
  • Lastpage
    86
  • Abstract
    Three-dimensional transient simulations of semiconductor devices are described. Current-drive boundary conditions are treated to simulate memory cell operations including a capacitor and a switch. Memory cell READ operation with alpha-particle impingement and microavalanche characteristics can be numerically simulated.
  • Keywords
    Circuit simulation; Computational modeling; Computer simulation; Integrated circuit technology; Laboratories; Numerical simulation; Poisson equations; Semiconductor devices; Switches; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
  • Conference_Location
    Dublin, Ireland
  • Print_ISBN
    0-906783-72-0
  • Type

    conf

  • DOI
    10.1109/NASCOD.1987.721126
  • Filename
    721126
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1701936