• DocumentCode
    1701965
  • Title

    Two-dimensional Numerical Analysis Of Silicon Bipolar Magnetotransistors

  • Author

    Allegretto, W. ; Nathan, A. ; Baltes, H.P.

  • Author_Institution
    The University of Alberta
  • fYear
    1987
  • Firstpage
    87
  • Lastpage
    92
  • Abstract
    The numerical analysis of carrier transport in magnetic-field-sensitive integrated bipolar transistors is presented. The resulting distributions of potential and current density were obtained for a lateral CMOS NPN dual-collector magne totransistor, in the presence of a magnetic field perpendicular to the device surface.
  • Keywords
    Boundary conditions; CMOS technology; Electrostatics; Magnetic analysis; Magnetic fields; Neodymium; Nonlinear equations; Numerical analysis; Poisson equations; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
  • Conference_Location
    Dublin, Ireland
  • Print_ISBN
    0-906783-72-0
  • Type

    conf

  • DOI
    10.1109/NASCOD.1987.721127
  • Filename
    721127
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1701965