• DocumentCode
    1701982
  • Title

    A study on Al bondpad grain boundaries and galvanic corrosion in wafer fabrication

  • Author

    Younan, Hua

  • Author_Institution
    Chartered Semicond. Mfg Ltd, Singapore, Singapore
  • fYear
    2004
  • Abstract
    Galvanic corrosion on microchip Al bondpads cause discoloration and nonstick bondpads at assembly processes. Thus it is very important to eliminate galvanic corrosion in wafer fab and assembly houses. In this paper, Al bondpad grain boundaries and galvanic corrosion is discussed. It was found that galvanic corrosion mostly occurred at bondpad grain boundary areas. TEM results confirmed that Al oxide was not uniform at grain boundaries on Al bondpads. Therefore, we think that it can help to prevent/eliminate galvanic corrosion to grow up an Al oxide or improve uniformity of Al oxide on bondpads.
  • Keywords
    assembling; corrosion; failure analysis; grain boundaries; integrated circuit testing; transmission electron microscopy; wafer bonding; assembly process; bondpad grain boundaries; discoloration problem; galvanic corrosion; microchip bondpads; nonstick bondpads; wafer fabrication; Aluminum; Assembly; Corrosion; Fabrication; Galvanizing; Grain boundaries; Metallization; Optical filters; Scanning electron microscopy; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
  • Print_ISBN
    0-7803-8658-2
  • Type

    conf

  • DOI
    10.1109/SMELEC.2004.1620843
  • Filename
    1620843