Title :
Megas : Simulator Of GaAs MESFETS For Integrated Circuits
Author :
Archambaud, Y. ; Berthon, A. ; Bouyer, JJ ; Caquot, E. ; Gabillard, B. ; Mottet, S. ; Poncet, A. ; Salmer, G.
Author_Institution :
THOMSON-CSF
Abstract :
A program is presented for simulation of GaAs MESFET´s. It takes into account the thermalisation of majority carriers, surface effects and the substrate-related effects at the interface between the active layer and the semi-insulating material. The code provides a full simulation of the device from the fabrication to the electrical characterisation, thus beeing useful for the design and analysis of cir cuits as well as isolated components.
Keywords :
Charge carrier processes; Circuit simulation; Electrons; Fabrication; Gallium arsenide; Impurities; MESFET integrated circuits; Poisson equations; Semiconductor materials; Solid modeling;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721128
