Title :
5 GHz SiGe front-end components for WLAN applications
Author :
Song, Nam Jin ; Kim, Dohyong ; Jinwook Burm
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea
Abstract :
5-GHz RF front-end components for IEEE 802.11a WLAN has been designed and fabricated using 0.5 μm SiGe BiCMOS technology. The packaged LNA exhibited a noise figure of 2.5 dB with a gain of 16.5 dB at 5.15-5.35 GHz frequency range and an IIP3 of -10.5 dBm. The Rx/Tx mixers exhibited conversion gains of -2.1/-8.3 dB and IIP3s of 0.0/2.4 dBm, respectively. The DA achieved a very high gain of 26.5 dB and an OIP3 of 19.8 dBm. All the matching components were on-chip except the input DC block capacitors and LC output baluns. The effects of feedback resistance in the LNA on gain, input match, noise figure, and IP3 performance are investigated.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC mixers; feedback amplifiers; transceivers; wireless LAN; 5 GHz; BiCMOS technology; IEEE 802.11a WLAN; IP3 performance; RF receivers; RF transmitters; SiGe; conversion gain; feedback resistance; frontend components; heterodyne transceiver system; input match; mixers; noise figure; packaged LNA; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Impedance matching; Mixers; Noise figure; Packaging; Radio frequency; Silicon germanium; Wireless LAN;
Conference_Titel :
Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-8637-X
DOI :
10.1109/APASIC.2004.1349498
