5 GHz SiGe front-end components for WLAN applications

Author

Song, Nam Jin ; Kim, Dohyong ; Jinwook Burm

Author_Institution

Dept. of Electron. Eng., Sogang Univ., Seoul, South Korea

fYear

2004

Firstpage

362

Lastpage

365

Abstract

5-GHz RF front-end components for IEEE 802.11a WLAN has been designed and fabricated using 0.5 μm SiGe BiCMOS technology. The packaged LNA exhibited a noise figure of 2.5 dB with a gain of 16.5 dB at 5.15-5.35 GHz frequency range and an IIP3 of -10.5 dBm. The Rx/Tx mixers exhibited conversion gains of -2.1/-8.3 dB and IIP3s of 0.0/2.4 dBm, respectively. The DA achieved a very high gain of 26.5 dB and an OIP3 of 19.8 dBm. All the matching components were on-chip except the input DC block capacitors and LC output baluns. The effects of feedback resistance in the LNA on gain, input match, noise figure, and IP3 performance are investigated.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; MMIC mixers; feedback amplifiers; transceivers; wireless LAN; 5 GHz; BiCMOS technology; IEEE 802.11a WLAN; IP3 performance; RF receivers; RF transmitters; SiGe; conversion gain; feedback resistance; frontend components; heterodyne transceiver system; input match; mixers; noise figure; packaged LNA; BiCMOS integrated circuits; Gain; Germanium silicon alloys; Impedance matching; Mixers; Noise figure; Packaging; Radio frequency; Silicon germanium; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced System Integrated Circuits 2004. Proceedings of 2004 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-8637-X

Type

conf

DOI

10.1109/APASIC.2004.1349498

Filename

1349498