Title :
MRTD application for scattering analysis
Author :
Cao, Q. ; Wai, P.K.A. ; Yinchao, C.
Author_Institution :
Depart of Electron. & Inf. Eng., The Hong Kong Polytech. Univ., China
Abstract :
A three-dimensional electromagnetic scattering model based on the multiresolution time-domain (MRTD) scheme is presented, in which we apply an anisotropic perfectly matched layer (APML) absorber for open boundary truncation to the MRTD scattering analysis. We develop an MRTD near-to-far-zone field transform to derive the scattered fields, and adopt the pure scattered field formulation in order to obtain effective incident and scattered fields. With applications of the MRTD scheme, we construct the surface equivalent currents in the near-zone region and further derive the radar cross section (RCS) in the far-zone region for different scattering targets including perfectly electric conducting and lossy dielectric targets.
Keywords :
absorbing media; anisotropic media; conducting bodies; electric current; electromagnetic fields; electromagnetic wave absorption; electromagnetic wave scattering; finite difference time-domain analysis; radar cross-sections; time-domain analysis; 3D EM scattering model; FDTD; MRTD scattering analysis; RCS; anisotropic perfectly matched layer absorber; far-zone region; incident fields; lossy dielectric targets; multiresolution time-domain scheme; near-to-far-zone field transform; near-zone region; open boundary truncation; perfectly electric conducting targets; radar cross section; scattered fields; scattering analysis; scattering targets; surface equivalent currents; three-dimensional electromagnetic scattering model; Anisotropic magnetoresistance; Dielectric losses; Electromagnetic analysis; Electromagnetic modeling; Electromagnetic scattering; Equations; Partial response channels; Radar cross section; Radar scattering; Time domain analysis;
Conference_Titel :
Antennas and Propagation Society International Symposium, 2001. IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7070-8
DOI :
10.1109/APS.2001.959514