Title :
Thermal analysis of power GaAs MESFETs
Author :
Ghione, G. ; Golzio, P. ; Naldi, C.
Author_Institution :
Politecnico di Torino
Abstract :
The paper presents a technique for the self-consistent simulation of power GaAs MESFETs accounting for Joule heating within the active region. The presence of dissipators is included through equivalent boundary conditions, thereby allowing the coupled electro-thermal simulation to be performed on a small portion of the device only. The approach is validated by comparison with large-scale thermal simulation. Results are presented on the effect of device heating on DC characteristics, and temperature distributions are discussed for devices with realistic mountings.
Keywords :
Boundary conditions; Gallium arsenide; Heating; Integrated circuit modeling; Lattices; MESFETs; Poisson equations; Steady-state; Temperature distribution; Thermal conductivity;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721179
