DocumentCode
1702351
Title
Design approach for tunable CMOS active inductor
Author
Sharman, Rafiq ; A´ain, Abu Khari ; Azmi, Mohd ; Zhe, Huang Min
Author_Institution
Dept. of Electron. Eng., Universiti Teknologi Malaysia, Johor, Malaysia
fYear
2004
Abstract
A design approach for differential CMOS active inductor with a self-resonant frequency around 1.58GHz-3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of active inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH-60nH and 20-60 respectively. Furthermore, a technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area.
Keywords
CMOS integrated circuits; Q-factor; circuit tuning; inductors; integrated circuit design; 1.58 to 3.98 GHz; MOSFET; Q-factor; current source; differential CMOS active inductor; differential gyrator-C topology; emulated inductance; intrinsic capacitance; tunable CMOS active inductor; Active inductors; Capacitance; Circuit analysis; Circuit topology; Conductivity; Energy consumption; Equivalent circuits; Inductance; Q factor; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN
0-7803-8658-2
Type
conf
DOI
10.1109/SMELEC.2004.1620856
Filename
1620856
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