Title :
High voltage devices in advanced CMOS technologies
Author :
Bianchi, R.A. ; Raynaud, C. ; Blanchet, F. ; Monsieur, F. ; Noblanc, O.
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
CMOS technologies for mobile systems require integrated high voltage devices to address analog baseband and RF power applications. Technology and device architecture evolution, from 0.5 mum BCD-like to advanced 45 nm CMOS, on bulk and thin SOI substrates, are reviewed in this paper. Main challenges encountered when integrating these devices in advanced CMOS are explained. The influence of the gate oxide thickness on the relevant figures of merit and some considerations on performance-reliability trade-off are provided.
Keywords :
CMOS analogue integrated circuits; MOSFET; integrated circuit reliability; power integrated circuits; silicon-on-insulator; CMOS technologies; SOI; analog baseband circuits; gate oxide thickness; high voltage MOSFET; integrated high voltage devices; reliability; Baseband; CMOS technology; Radio frequency; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2009. CICC '09. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-4071-9
Electronic_ISBN :
978-1-4244-4073-3
DOI :
10.1109/CICC.2009.5280839
