DocumentCode :
1702412
Title :
Efficient two-dimensional Monte Carlo simulation of ion implantation
Author :
Hobler, C. ; Selberherr, Siegfried
Author_Institution :
Institut fur Allgemeine Elektrotechnik und Elektronik
fYear :
1987
Firstpage :
225
Lastpage :
230
Abstract :
We have developed a Monte Carlo code for 2D-simulations of ion implantation which allows fairly arbitrary geometries. To alleviate the problem of large computer times, we apply two methods. First, in the case of complex geometries, most of the time is spent to detect, whether the ions cross boundaries. This extra time-as compared with implantations in infinite targets-may be almost eliminated by putting a grid over each region of the simulation area, and giving each grid element the information whether an ion located inside this element may cross a boundary during the next free flight path. Secondly, we use a precomputed table to evaluate scattering angles 0. Tabulating cot 0/2 instead of 0, allows moderate table dimensions and small interpolation errors. In a typical example presented in this paper, the execution time could be reduced by a factor of 4 using these methods.
Keywords :
Aerospace simulation; Amorphous materials; Application software; Computational modeling; Geometry; Interpolation; Ion implantation; Monte Carlo methods; Scattering; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
Type :
conf
DOI :
10.1109/NASCOD.1987.721184
Filename :
721184
Link To Document :
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