Title :
Hot Electron Simulation For MOSFET´s Using A High-speed Monte Carlo Method
Author_Institution :
Toshiba Corporation
Abstract :
A new free-flight optimization technique has been developed to reduce the CPU time by more than one order. Based on rigorous treatment of carrier scattering processes, especially for photo-generation and impact ionization, hot carrier effects for MOSFET´s are investigated in detail, from the temperature and energy distribution viewpoints. The analysis revealed that the hot carrier effects are mainly dominated by carrier temperature, but are suppressed by im pact ionization.
Keywords :
Electrons; Hot carrier effects; Impact ionization; Joining processes; MOSFET circuits; Microscopy; Optimization methods; Particle scattering; Temperature distribution; Very large scale integration;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721188
