DocumentCode
1702473
Title
Hot Electron Simulation For MOSFET´s Using A High-speed Monte Carlo Method
Author
Kato, K.
Author_Institution
Toshiba Corporation
fYear
1987
Firstpage
249
Lastpage
254
Abstract
A new free-flight optimization technique has been developed to reduce the CPU time by more than one order. Based on rigorous treatment of carrier scattering processes, especially for photo-generation and impact ionization, hot carrier effects for MOSFET´s are investigated in detail, from the temperature and energy distribution viewpoints. The analysis revealed that the hot carrier effects are mainly dominated by carrier temperature, but are suppressed by im pact ionization.
Keywords
Electrons; Hot carrier effects; Impact ionization; Joining processes; MOSFET circuits; Microscopy; Optimization methods; Particle scattering; Temperature distribution; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location
Dublin, Ireland
Print_ISBN
0-906783-72-0
Type
conf
DOI
10.1109/NASCOD.1987.721188
Filename
721188
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