A novel high speed rfw scheme with no steady leakage for CP cell MRAM

A novel scheme for high speed readiwrite mechanism with no steady leakage for cross-point cell MRAM is presented. Due to inherent completely electrically unisolation among the CP cells in the memory array, new readidle circuihy cascade with reference cells and switchable current sinks is devised to maintain no leakage current in the steady state over a addressed readlwrite operation. The proposed scheme with low power consumption is verified by a 0.18rn TSMC CMOS SPSM technology.