Intrinsic Capacitances Computation Of Semiconductor Multi Electrodes Devices

Steady state simulation of silicon and IU-IZ devices are performed by solving the general set of equation (eventually completed by energy conservation equation. Using finite difference (FD) or finite element methods (FEM), the resolution gives the device terminal currents with accuracy. But as the internal capacitances of the device are concerned, a general quasi-static method to determine the capacitances of multielectrode stuctures is desirable. Such a method should not call for any specific consideration over geometry or conduction behavior, so as to be included in a universal simulation code.