DocumentCode
1702629
Title
Rapid Convergence Bipolar-MOS Composite Device Model - Tonadder- And Its Application To Bipolar-Mode MOSFETs(IGBT)
Author
Nakagawa, Akio ; Nakamura, Shin ; Shinohe, Takeshi
Author_Institution
Toshiba Research
fYear
1987
Firstpage
295
Lastpage
300
Abstract
A rapid convergence bipolar-MOS composite device simulator, TONADDEII, has been developed. It was found that a combination of coupled method, complete Newton scheme, 9 point discretization and ILUBCG method enables rapid convergence for both static and transient solutions regardless of bias conditions. TONADDEII was applied to bipolar-mode MOSFETs(IGBT), analyzing N-buffer effects on electrical characteristics and why the bipolar-mode MOSFET safe operating area exceeds the theoretical limit for NPN bipolar transistors.
Keywords
Acceleration; Analytical models; Convergence; Electric variables; Equations; Jacobian matrices; Research and development; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location
Dublin, Ireland
Print_ISBN
0-906783-72-0
Type
conf
DOI
10.1109/NASCOD.1987.721195
Filename
721195
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