Title :
Electro-thermal coupling simulation of high power bipolar transistors
Author :
Napieralski, A. ; Dorkel, J.M. ; Leturcq, Ph.
Author_Institution :
Laboratoire d´´Automatique et d´´Analyse des Systemes du C.N.R.S.
Abstract :
It is shown that a numerical iterative coupling process between an electrical model of high power bipolar transistors and a three-dimensional thermal model (based on the thermal influence coefficient method) of the transistor and its case well predicts the onset of an electro-thermal instability in this kind of devices. The presented calculation procedure can supply a useful tool for the design of an optimized thermal environment in order to improve the DC SOA of high power bipolar transistors.
Keywords :
Bipolar transistors; Design optimization; Electric breakdown; Failure analysis; Iterative methods; Power system modeling; Predictive models; Semiconductor optical amplifiers; Spatial resolution; Temperature;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721196
