Title :
Asymptotic Methods For MOSFET Modeling
Author :
Ward, Ed J. ; Odeh, F.M. ; Cohen, D.S.
Author_Institution :
California Institute Of Technology
Abstract :
In this note a brief summary of an asymptotic study of the semiconductor equations relevant to a long n-channel MOSFET is presented. Using formal asymptotic techniques, a pointwise description of the potential and the carrier concentration is obtained. From this description, an asymptotic expression for the mobile charge uniform across the weak-strong inversion transition, which is needed for device characteristics, is available.
Keywords :
Boundary conditions; Current density; Doping profiles; Electrons; Equations; Geometry; MOSFET circuits; Mathematics; P-n junctions; Voltage;
Conference_Titel :
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location :
Dublin, Ireland
Print_ISBN :
0-906783-72-0
DOI :
10.1109/NASCOD.1987.721201
