• DocumentCode
    1702742
  • Title

    Asymptotic Methods For MOSFET Modeling

  • Author

    Ward, Ed J. ; Odeh, F.M. ; Cohen, D.S.

  • Author_Institution
    California Institute Of Technology
  • fYear
    1987
  • Firstpage
    333
  • Lastpage
    339
  • Abstract
    In this note a brief summary of an asymptotic study of the semiconductor equations relevant to a long n-channel MOSFET is presented. Using formal asymptotic techniques, a pointwise description of the potential and the carrier concentration is obtained. From this description, an asymptotic expression for the mobile charge uniform across the weak-strong inversion transition, which is needed for device characteristics, is available.
  • Keywords
    Boundary conditions; Current density; Doping profiles; Electrons; Equations; Geometry; MOSFET circuits; Mathematics; P-n junctions; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
  • Conference_Location
    Dublin, Ireland
  • Print_ISBN
    0-906783-72-0
  • Type

    conf

  • DOI
    10.1109/NASCOD.1987.721201
  • Filename
    721201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1702742