DocumentCode
1702781
Title
Self-consistent Calculation Of Electron States In III-V Multilayer Structures
Author
Zimmermann, B. ; Palmier, J.F. ; Caussignac, Ph ; Ilegerns, M.
Author_Institution
Institut de Microelectronique
fYear
1987
Firstpage
346
Lastpage
351
Abstract
Two different algorithms have been developed for calculating one-dimensional self-consistent numerical solutions to the Schrodinger and Poisson equations for electron states in III-V multi-layer structures. The Schrodinger equation is solved by a spectral or a finite-difference method. The Poisson equation is solved with a finite element method together with a Newton linearization scheme. The latter makes it necessary to evaluate the derivative of the charge density with respect to the electrostatic potential. In a first approach we have approximated this derivative by its classical expression. In a second approach, which is more consistent with the physical model, we have evaluated the derivative by making use of the quantum mechanical perturbation theory. Both methods lead to convergence of the over-all solution. An important feature of the self-consistent solution is that it guarantees global charge neutrality and that it leads to the "true" electron states. In the most spectacular cases the states with the lowest energy are localized states in the self-consistent solution and extended states in the non self-consistent solution.
Keywords
Conducting materials; Effective mass; Eigenvalues and eigenfunctions; Electrons; Electrostatics; Finite difference methods; III-V semiconductor materials; Nonhomogeneous media; Poisson equations; Schrodinger equation;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location
Dublin, Ireland
Print_ISBN
0-906783-72-0
Type
conf
DOI
10.1109/NASCOD.1987.721203
Filename
721203
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