Title :
A Study Of Charge Control In n- And p-type Lattice Matched And Strained Channel MODFETs With GaAs And InP Substrates
Author :
Jaffe, M.D. ; Sekiguchi, Y. ; Singh, J. ; Chan, Y.-J. ; Pavlidìs, D. ; Quillec, M.
Author_Institution :
The University of Michigan
Keywords :
Capacitive sensors; Gallium arsenide; HEMTs; Indium phosphide; Lattices; MODFETs; Material properties; Poisson equations; Schrodinger equation; Strain control;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
DOI :
10.1109/CORNEL.1987.721215
