DocumentCode :
1703225
Title :
Failure analysis on wafer edge issue in 0.13μm technology
Author :
Indahwan, Jony ; Song, Z.G. ; Tun, T. ; Oh, C.K. ; Lo, K.F.
Author_Institution :
QRA, Chartered Semicond. Manuf. Ltd., Singapore, Singapore
fYear :
2004
Abstract :
In this paper, two front ends and one back end issues which were found to have cause failure at the edge of wafers on 0.13μm technology would be discussed. They are contact W-extrusion, STI gap-fill issue and Cu puddle due to thin film particle.
Keywords :
failure analysis; integrated circuit reliability; integrated circuit testing; 0.13 micron; Cu puddle; STI gap-fill issue; W-extrusion; failure analysis; thin film particle; wafer edge; Failure analysis; Inspection; Lithography; Manufacturing industries; Microelectronics; Pulp manufacturing; Scanning electron microscopy; Semiconductor device manufacture; Semiconductor thin films; Wood industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN :
0-7803-8658-2
Type :
conf
DOI :
10.1109/SMELEC.2004.1620884
Filename :
1620884
Link To Document :
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