DocumentCode
1703225
Title
Failure analysis on wafer edge issue in 0.13μm technology
Author
Indahwan, Jony ; Song, Z.G. ; Tun, T. ; Oh, C.K. ; Lo, K.F.
Author_Institution
QRA, Chartered Semicond. Manuf. Ltd., Singapore, Singapore
fYear
2004
Abstract
In this paper, two front ends and one back end issues which were found to have cause failure at the edge of wafers on 0.13μm technology would be discussed. They are contact W-extrusion, STI gap-fill issue and Cu puddle due to thin film particle.
Keywords
failure analysis; integrated circuit reliability; integrated circuit testing; 0.13 micron; Cu puddle; STI gap-fill issue; W-extrusion; failure analysis; thin film particle; wafer edge; Failure analysis; Inspection; Lithography; Manufacturing industries; Microelectronics; Pulp manufacturing; Scanning electron microscopy; Semiconductor device manufacture; Semiconductor thin films; Wood industry;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on
Print_ISBN
0-7803-8658-2
Type
conf
DOI
10.1109/SMELEC.2004.1620884
Filename
1620884
Link To Document